A uniform base p-n-p bipolar transistor has the following specification: Emitter doping concentration, NAE 1.5 × 1020 cm-3 Emitter depth, WE 0.35 μm Base doping concentration, NDB 3 × 1018 cm-3 Base width, WB 0.2 μm Electron diffusion coefficient in emitter, DnE 10 cm²/s Hole diffusion coefficient in base, DpB 6 cm²/s Minority carrier lifetime of holes in base, τpB 0.2 μs Determine the base transit time, base transport factor, emitter efficiency and common emitter current gain in forward active mode at room temperature. Assume negligible recombination at the emitter-base junction. [Hint: You may find it useful to recall the formulae derived in tutorial questions 1 and 3.] (b) By trial and error, find the new value of base width required to achieve a current gain of 80. An accuracy of ±0.01 μm is sufficient. Show the results of all intermediate calculations.